Gallium Nitride (GaN) Epiwafers Market Size 2023-2029
The global Gallium Nitride (GaN) Epiwafers market was valued at US$ 432.9 million in 2022 and is projected to reach US$ 1577.3 million by 2029, at a CAGR of 20.3% during the forecast period. The influence of COVID-19 and the Russia-Ukraine War were considered while estimating market sizes.
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Gallium Nitride (GaN) Epiwafers are essentially thin layers of gallium nitride that are grown or deposited on a substrate, typically a crystalline material like silicon carbide (SiC) or sapphire. These epiwafers play a crucial role as a foundation in the production of electronic devices utilizing gallium nitride technology.
Gallium nitride is a semiconductor material with a wide bandgap and is well-known for its exceptional electrical and optical properties. Through the growth of a thin layer of gallium nitride on a suitable substrate, engineers and researchers are able to manufacture high-performance electronic devices, including power amplifiers, high-frequency transistors, light-emitting diodes (LEDs), laser diodes, and various other optoelectronic components.
Total Market by Segment:
Global Gallium Nitride (GaN) Epiwafers Market, by Type, 2018-2023, 2024-2029 ($ Millions) & (K Units)
Global Gallium Nitride (GaN) Epiwafers Market Segment Percentages, by Type, 2022 (%)
GaN-on-Sapphire
GaN-On-Si
GaN-On-SiC
GaN-on-GaN
Others
Further, the report presents profiles of competitors in the market, key players include:
NTT AT
Wolfspeed
SCIOCS (Sumitomo)
EpiGaN (Soitec)
DOWA Electronics Materials
IQE
Enkris Semiconductor Inc
CorEnergy
GLC
Genettice
Suzhou Nanowin
Episil-Precision Inc
Xinguan Technology
Shanxi Yuteng
Sumitomo Electric Industries
Cree, Inc.
Mitsubishi Chemical Corporation
Aixtron SE
Nichia Corporation
Epistar Corporation
Osram Opto Semiconductors GmbH
Visual Photonics Epitaxy Co. Ltd. (VPEC)