GaN Semiconductor Devices Market Size 2023-2029
The global GaN Semiconductor Devices market was valued at US$ 1040.4 million in 2022 and is projected to reach US$ 4245.5 million by 2029, at a CAGR of 22.3% during the forecast period. The influence of COVID-19 and the Russia-Ukraine War were considered while estimating market sizes.
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GaN semiconductor devices are electronic components that utilize Gallium Nitride as the semiconductor material. GaN, known for its wide-bandgap properties, offers significant advantages over traditional semiconductors like silicon.
These devices are designed to operate under high frequencies, high voltages, and high-temperature conditions, making them suitable for a wide range of applications, including power electronics, RF devices, and optoelectronics. GaN semiconductor devices provide several benefits such as high power density, low on-resistance, high breakdown voltage, and fast switching speed.
In the field of power electronics, GaN semiconductor devices find applications in power converters, inverters, and motor drives. Compared to silicon-based devices, GaN devices enable higher energy efficiency, compact form factors, and improved overall performance.
RF devices benefit from GaN semiconductor devices as they are employed in wireless communication systems, radar systems, and satellite communications. GaN devices offer higher power capabilities, improved linearity, and wider bandwidth, resulting in enhanced signal transmission and reception.
In optoelectronics, GaN semiconductor devices play a crucial role in the development of LEDs and laser diodes. GaN-based LEDs exhibit higher efficiency, longer lifetimes, and a broader color range, making them suitable for a variety of lighting and display applications.
Total Market by Segment: Global GaN Semiconductor Devices Market, by Type, 2018-2023, 2024-2029 ($ Millions) & (K Units)
GaN Power Devices:
Schottky Diodes: This type of GaN power device holds 30% of the GaN power device market. Schottky diodes are known for their fast switching speed, low forward voltage drop, and high-temperature operation capabilities. They are commonly used in power rectification, voltage clamping, and power conversion applications.
Field Effect Transistors (FETs): FETs dominate the GaN power device market, accounting for 70% of the market share. GaN FETs offer high power density, low on-resistance, and high-speed switching characteristics. They are widely used in applications such as power supplies, electric vehicles, renewable energy systems, and wireless charging.
GaN RF Devices:
Power Amplifiers (PA): Power amplifiers using GaN technology hold the largest share, 40%, in the GaN RF device market. GaN-based power amplifiers deliver high output power, high efficiency, and wide bandwidth. They are extensively used in wireless communication systems, including cellular base stations, radar systems, and satellite communication.
Low Noise Amplifiers (LNA): LNAs account for around 20% of the GaN RF device market. GaN LNAs offer low noise figure, high linearity, and excellent signal amplification capabilities. They are widely employed in sensitive RF systems such as receivers for wireless communication, radar, and satellite applications.
RF Switches: GaN-based RF switches also hold 20% of the GaN RF device market. These switches provide fast switching speed, low insertion loss, and high isolation. They are commonly used in communication systems for signal routing, impedance matching, and antenna switching.
Monolithic Integrated Circuits (MMIC): GaN MMICs make up around 20% of the GaN RF device market. These integrated circuits incorporate various active and passive components on a single chip, providing compactness and improved performance. GaN MMICs are utilized in high-frequency applications such as radar systems, wireless communication, and aerospace and defense technologies.
Global GaN Semiconductor Devices Market Segment Percentages, by Type, 2022 (%)
GaN Power Devices (Schottky Diodes, Field Effect Transistors (FETs))
GaN RF Devices (Power Amplifier PA, Low Noise Amplifier LNA, RF Switch SWITCH, Monolithic Integrated Circuit MMIC)
Global GaN Semiconductor Devices Market, by Wafer Size, 2018-2023, 2024-2029 ($ Millions) & (K Units)
Global GaN Semiconductor Devices Market Segment Percentages, by Wafer Size, 2022 (%)
2-inch GaN Wafers
4-inch GaN Wafers
6-inch GaN Wafers
8-inch GaN Wafers
Other Sizes (e.g., 12-inch GaN Wafers)
Global GaN Semiconductor Devices Market, by Application, 2018-2023, 2024-2029 ($ Millions) & (K Units)
Global GaN Semiconductor Devices Market Segment Percentages, by Application, 2022 (%)
Consumer Electronics
Telecom & Datacom
Industrial Industry
Defence & Aerospace
Energy Industry
Automobile & Mobility
Others
Further, the report presents profiles of competitors in the market, key players include:
Toshiba
Wolfspeed
GaN Systems
Infineon Technologies
Efficient Power Conversion (EPC)
Mitsubishi Electric
STMicroelectronics
Transphorm
NexGen
ROHM Semiconductor
Sumitomo Electric Device Innovations Inc (SEDI)
Qorvo
MACOM
Renesas Electronics
Dynax Semiconductor
Jiangsu Corenergy Semiconductor
Ampleon
Innoscience
NXP Semiconductors
NTT Advanced Technology Corporation
Texas Instruments Incorporated
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